sop8 plastic-encapsulate mosfets CJQ7328 dual p-channel mosfet description the CJQ7328 uses advanced proc essing techniques to achieve extremely low on-resistance. this benefit, combined with the ruggedized device design that the mosfets are well known for, provides the designer with an extr emely efficient and reliable device for use in battery and load management. features ultra low on-resistance maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 20 v continuous drain current i d -8 pulsed drain current (note 1) i dm -32 a power dissipation (note 2) p d 1.4 w thermal resistance from junction to ambient (note 2) r ja 89 /w junction temperature t j 150 storage temperature t stg -55 ~+150 sop8 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain source breakdown voltage v (br)dss v gs =0v,i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v, v gs =0v -15 a gate body leakage l gss v ds =0v, v gs =20v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -2.5 v v gs =-10v, i d =-8a 21 drain-source on-state resistance (note 3) r ds(on ) v gs =-4.5v, i d =-6.8a 32 m ? forward transconductance g fs v ds =-10v, i d =-8a 12 s dynamic characteristics (note 4) input capacitance c iss 2675 output capacitance c oss 409 reverse transfer capacitance c rss v ds =-25v,v gs =0v,f =1mhz 262 pf total gate charge q g 78 gate-source charge q gs 9.8 gate-drain charge q gd v ds =-15v,v gs =-10v,i d =-8a 8.3 nc turn-on delay time t d (on) 20 rise time t r 23 turn-off delay time t d(off) 297 fall time t f v dd =-15v,r d =15 ? i d =-1a,v gs =-10v,r g =6 ? 147 ns drain-source body diode characteristics diode forward voltage (note 3) v sd i s =-2a,v gs =0v -1.2 v notes: 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on 1?1? fr4 board,t 10s . 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not s ubject to production testing. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2013
-0 -2 -4 -6 -8 -10 0 5 10 15 20 25 30 35 40 -0 -5 -10 -15 -20 1e-3 0.01 0.1 1 10 -2 -4 -6 -8 10 15 20 25 30 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0 -1 -2 -3 -4 -400 -600 -800 -1000 -1e-4 -1e-3 -0.01 -0.1 -1 -10 25 50 75 100 125 -1.0 -1.2 -1.4 -1.6 -10v -4.0v -3.5v -3.0v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =-2.5v gate to source voltage v gs (v) on-resistance r ds(on) ( ? ) i d =-8a t a =25 pulsed v gs ?? r ds(on) t a =25 pulsed v gs =-10v v gs =-4.5v on-resistance r ds(on) (m ? ) drain current i d (a) i d ?? r ds(on) -0.5 CJQ7328 drain current i d (a) gate to source voltage v gs (v) v ds =-24v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (mv) t a =25 pulsed v sd i s ?? output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =-250ua threshold voltage 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2013
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